Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

Acceptor-like deep level defects in ion-implanted ZnO

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Deep-level defects study of arsenic-implanted ZnO single crystal

of thesis entitled DEEP LEVEL DEFECTS STUDY OF ARSENIC IMPLANTED ZnO SINGLE CRYSTAL submitted by Congyong ZHU for the degree of Master of Philosophy at The University of Hong Kong in September 2008 Zinc oxide has recently received great attention because of its potential applications in the fields of spintronics and optoelectronics. P-type doping is one of the greatest issues that have to be ov...

Defects in N, O and N, Zn implanted ZnO bulk crystals

Nitrogen is a deep acceptor in ZnO

Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations [Lyons, Janotti, and Van de Walle, Appl. Phys. Lett. 95, 252105 (2009)] indicate that nitrogen is a deep acceptor. This paper presents experimental evidence that nitrogen is, in fact, a deep accep...

Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV an...